US 12,126,142 B2
Nitride semiconductor laser device and method of manufacturing nitride semiconductor laser device
Takashi Tange, Kanagawa (JP); Kunihiko Tasai, Tokyo (JP); and Kota Tokuda, Kanagawa (JP)
Assigned to SONY GROUP CORPORATION, Tokyo (JP); and SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Appl. No. 17/292,975
Filed by SONY GROUP CORPORATION, Tokyo (JP); and SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
PCT Filed Oct. 25, 2019, PCT No. PCT/JP2019/041860
§ 371(c)(1), (2) Date May 11, 2021,
PCT Pub. No. WO2020/105362, PCT Pub. Date May 28, 2020.
Claims priority of application No. 2018-216957 (JP), filed on Nov. 20, 2018.
Prior Publication US 2022/0006265 A1, Jan. 6, 2022
Int. Cl. H01S 5/343 (2006.01); H01S 5/042 (2006.01); H01S 5/22 (2006.01)
CPC H01S 5/34333 (2013.01) [H01S 5/04252 (2019.08); H01S 5/22 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A nitride semiconductor laser device, comprising:
a single-crystal substrate that extends in one direction;
a base layer on the single-crystal substrate, wherein the base layer includes a nitride semiconductor;
a sheet-shaped structure on the base layer to stand in a direction perpendicular to the base layer, wherein
the sheet-shaped structure has an area of a side surface that is greater than an area of an upper surface,
the side surface extends in a longitudinal direction of the single-crystal substrate,
the sheet-shaped structure includes a nitride semiconductor, and
a dopant concentration of the sheet-shaped structure differs based on a growth direction;
a light emitting layer at least on the side surface of the sheet-shaped structure, wherein the light emitting layer includes a nitride semiconductor; and
a resonator mirror that comprises a pair of end surfaces of the sheet-shaped structure, wherein a first end surface of the pair of end surfaces is opposite to a second end surface of the pair of end surfaces in the longitudinal direction.