US 12,126,139 B2
LED with small mesa width
Johnny Cai Tang, Baulkham Hills (AU); and Petar Atanackovic, Henley Beach South (AU)
Assigned to Silanna UV Technologies Pte Ltd, Singapore (SG)
Filed by Silanna UV Technologies Pte Ltd, Singapore (SG)
Filed on Feb. 7, 2023, as Appl. No. 18/165,825.
Application 17/451,410 is a division of application No. 16/737,689, filed on Jan. 8, 2020, granted, now 11,158,994, issued on Oct. 26, 2021.
Application 18/165,825 is a continuation of application No. 17/451,410, filed on Oct. 19, 2021, granted, now 11,605,934.
Application 16/737,689 is a continuation of application No. 16/022,558, filed on Jun. 28, 2018, granted, now 10,554,020, issued on Feb. 4, 2020.
Claims priority of provisional application 62/526,859, filed on Jun. 29, 2017.
Prior Publication US 2023/0238776 A1, Jul. 27, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01S 5/227 (2006.01); H01L 33/06 (2010.01); H01L 33/08 (2010.01); H01L 33/10 (2010.01); H01L 33/32 (2010.01); H01L 33/38 (2010.01); H01L 33/44 (2010.01); H01S 5/065 (2006.01); H01S 5/10 (2021.01); H01S 5/20 (2006.01); H01S 5/323 (2006.01); H01L 33/20 (2010.01); H01L 33/28 (2010.01); H01S 5/183 (2006.01); H01S 5/343 (2006.01)
CPC H01S 5/2275 (2013.01) [H01L 33/06 (2013.01); H01L 33/08 (2013.01); H01L 33/10 (2013.01); H01L 33/32 (2013.01); H01L 33/382 (2013.01); H01L 33/387 (2013.01); H01L 33/44 (2013.01); H01S 5/0655 (2013.01); H01S 5/1064 (2013.01); H01S 5/2004 (2013.01); H01S 5/32341 (2013.01); H01L 33/105 (2013.01); H01L 33/20 (2013.01); H01L 33/28 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0066 (2013.01); H01S 5/183 (2013.01); H01S 5/34333 (2013.01)] 30 Claims
OG exemplary drawing
 
1. A light emitting device comprising:
a first active layer on a substrate, at least a first portion of the first active layer comprising a first electrical polarity;
a current spreading length; and
a plurality of mesa regions on the first active layer, wherein each mesa region comprises:
at least a second portion of the first active layer;
a light emitting region on the second portion of the first active layer, the light emitting region having a thickness and being configured to emit light, the emitted light having a target wavelength from 200 nm to 300 nm, the light emitting region having a dimension parallel to the substrate smaller than twice the current spreading length; and
a second active layer on the light emitting region, at least a portion of the second active layer comprising a second electrical polarity,
wherein one or more of the first active layer, the light emitting region, or the second active layer comprises ZnO, MgO, or BN.