US 12,125,944 B2
Semipolar micro-LED
Wei Sin Tan, Plymouth (GB); Andrea Pinos, Plymouth (GB); Xiang Yu, Plymouth (GB); and Samir Mezouari, Swindon (GB)
Assigned to META PLATFORMS TECHNOLOGIES, LLC, Menlo Park, CA (US)
Filed by Meta Platforms Technologies, LLC, Menlo Park, CA (US)
Filed on Oct. 25, 2021, as Appl. No. 17/510,282.
Prior Publication US 2023/0130445 A1, Apr. 27, 2023
Int. Cl. H01L 33/24 (2010.01); H01L 25/075 (2006.01); H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/14 (2010.01); H01L 33/18 (2010.01); H01L 33/32 (2010.01); H01L 33/40 (2010.01); H01L 33/62 (2010.01)
CPC H01L 33/24 (2013.01) [H01L 25/0753 (2013.01); H01L 33/0075 (2013.01); H01L 33/06 (2013.01); H01L 33/145 (2013.01); H01L 33/18 (2013.01); H01L 33/32 (2013.01); H01L 33/405 (2013.01); H01L 33/62 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A light-emitting diode comprising:
an n-type semiconductor layer including a pit structure formed therein;
active layers grown only on sidewalls of the pit structure and configured to emit light; and
a p-type semiconductor layer on the active layers and at least partially in the pit structure.