US 12,125,939 B2
Method of manufacturing light-emitting device and light-emitting device
Hidetoshi Tanaka, Anan (JP)
Assigned to NICHIA CORPORATION, Anan (JP)
Filed by NICHIA CORPORATION, Anan (JP)
Filed on Oct. 23, 2020, as Appl. No. 17/078,839.
Claims priority of application No. 2019-197184 (JP), filed on Oct. 30, 2019.
Prior Publication US 2021/0135045 A1, May 6, 2021
Int. Cl. H01L 33/00 (2010.01); H01L 33/50 (2010.01); H01L 33/52 (2010.01)
CPC H01L 33/0093 (2020.05) [H01L 33/504 (2013.01); H01L 33/52 (2013.01); H01L 2933/0041 (2013.01); H01L 2933/005 (2013.01); H01L 2933/0058 (2013.01); H01L 2933/0066 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A method of manufacturing a light-emitting device, the method comprising:
providing a structure body comprising:
a silicon substrate,
a first semiconductor layered body comprising a first light-emitting layer, the first semiconductor layered body being disposed on or above the silicon substrate, and
a second semiconductor layered body comprising a second light-emitting layer, the second semiconductor layered body being disposed on or above the silicon substrate;
removing an upper-side portion of the silicon substrate from an upper side of the silicon substrate, wherein the upper-side portion is located between the first semiconductor layered body and the second semiconductor layered body in a first direction from the first semiconductor layered body to the second semiconductor layered body;
after the step of removing the upper-side portion, forming a light-reflecting film over lateral surfaces of the silicon substrate formed in the step of removing the upper-side portion;
after the step of forming the light-reflecting film, forming a first resin layer comprising a lateral portion covering a lateral side of the silicon substrate and lateral sides of the first and second semiconductor layered bodies, such that a portion of the first resin layer is in a region formed in the step of removing the upper-side portion;
removing (i) a first portion of the silicon substrate to expose a first surface of the first semiconductor layered body, (ii) a second portion of the silicon substrate to expose a second surface of the first semiconductor layered body, and (iii) an intermediate portion of the silicon substrate below the lateral portion of the first resin layer, and leaving a third portion of the silicon substrate on a third surface of the first semiconductor layered body that is between the first surface and the second surface, wherein the third surface is continuous with the first surface and the second surface, and wherein removing the intermediate portion causes the light-reflecting film to be exposed; and
forming a first wavelength conversion member on or below the first surface exposed by the removal of the first portion.