US 12,125,934 B2
Method of manufacturing an optical sensor
Yi-Shin Chu, Hsinchu (TW); Hsiang-Lin Chen, Hsinchu (TW); Yin-Kai Liao, Taipei (TW); Sin-Yi Jiang, Hsinchu (TW); and Kuan-Chieh Huang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Mar. 26, 2021, as Appl. No. 17/213,961.
Prior Publication US 2022/0310871 A1, Sep. 29, 2022
Int. Cl. H01L 31/18 (2006.01); H01L 31/02 (2006.01)
CPC H01L 31/1812 (2013.01) [H01L 31/02016 (2013.01); H01L 31/1864 (2013.01); H01L 31/1868 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor structure, the method comprising:
etching a trench in a substrate;
forming a light-absorption layer in the trench;
forming a first doped region of a first conductivity type and a second doped region of a second conductivity type in the light-absorption layer adjacent to the first doped region;
depositing a first patterned mask layer over the light-absorption layer, wherein the first patterned mask layer includes an opening exposing the second doped region and covers the first doped region;
forming a first silicide layer in the opening on the second doped region;
depositing a barrier layer over the first doped region; and
annealing the barrier layer to form a second silicide layer on the first doped region.