US 12,125,919 B2
Metal oxide and transistor including the metal oxide
Shunpei Yamazaki, Tokyo (JP); Tomonori Nakayama, Kanagawa (JP); and Masahiro Takahashi, Kanagawa (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken (JP)
Appl. No. 17/430,332
Filed by SEMICONDUCTOR ENERGY LABORATORY CO., LTD., Atsugi (JP)
PCT Filed Feb. 11, 2020, PCT No. PCT/IB2020/051041
§ 371(c)(1), (2) Date Aug. 12, 2021,
PCT Pub. No. WO2020/170068, PCT Pub. Date Aug. 27, 2020.
Claims priority of application No. 2019-030883 (JP), filed on Feb. 22, 2019; and application No. 2019-093145 (JP), filed on May 16, 2019.
Prior Publication US 2022/0131010 A1, Apr. 28, 2022
Int. Cl. H01L 29/786 (2006.01); H01L 29/24 (2006.01); H10K 59/121 (2023.01)
CPC H01L 29/7869 (2013.01) [H01L 29/24 (2013.01); H01L 29/78648 (2013.01); H01L 29/78696 (2013.01); H10K 59/1213 (2023.02)] 21 Claims
OG exemplary drawing
 
1. A metal oxide comprising a microcrystalline region and an amorphous region,
wherein a less ordered region is included between the microcrystalline region and the amorphous region,
wherein the microcrystalline region is dispersed in the metal oxide, and
wherein at least a part of the microcrystalline region is covered with the less ordered region and is apart from the amorphous region.