US 12,125,912 B2
Semiconductor device structure and method for forming the same preliminary class
Lin-Yu Huang, Hsinchu (TW); Jia-Chuan You, Taoyuan (TW); Chia-Hao Chang, Hsinchu (TW); Tien-Lu Lin, Hsinchu (TW); Yu-Ming Lin, Hsinchu (TW); and Chih-Hao Wang, Baoshan Township, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Apr. 18, 2023, as Appl. No. 18/302,452.
Application 17/379,446 is a division of application No. 16/548,423, filed on Aug. 22, 2019, granted, now 11,069,811, issued on Jul. 20, 2021.
Application 18/302,452 is a continuation of application No. 17/379,446, filed on Jul. 19, 2021, granted, now 11,658,244.
Prior Publication US 2023/0261109 A1, Aug. 17, 2023
Int. Cl. H01L 29/78 (2006.01); H01L 21/308 (2006.01); H01L 21/768 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/785 (2013.01) [H01L 21/3081 (2013.01); H01L 21/3086 (2013.01); H01L 21/76816 (2013.01); H01L 21/76877 (2013.01); H01L 29/66795 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device structure, comprising:
a contact over a source/drain region of a fin structure;
a gate stack over a channel region of the fin structure;
a first mask layer covering the gate stack; and
a second mask layer covering the contact, wherein a side surface of the first mask layer is in direct contact with a side surface of the second mask layer, and the first mask layer includes a portion directly below the second mask layer, wherein a top surface of the first mask layer and a top surface of the second mask layer are substantially leveled.