US 12,125,879 B2
Epitaxial source/drain structure and method
I-Wen Wu, Hsinchu (TW); Chen-Ming Lee, Taoyuan County (TW); Fu-Kai Yang, Hsinchu (TW); Mei-Yun Wang, Hsin-Chu (TW); Chun-An Lin, Tainan (TW); Wei-Yuan Lu, Taipei (TW); Guan-Ren Wang, Hsinchu (TW); and Peng Wang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on Jul. 27, 2023, as Appl. No. 18/360,495.
Application 17/571,822 is a division of application No. 16/551,546, filed on Aug. 26, 2019, granted, now 11,222,951, issued on Jan. 11, 2022.
Application 18/360,495 is a continuation of application No. 17/571,822, filed on Jan. 10, 2022, granted, now 11,784,222.
Claims priority of provisional application 62/725,713, filed on Aug. 31, 2018.
Prior Publication US 2023/0378270 A1, Nov. 23, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/08 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/0847 (2013.01) [H01L 21/02532 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
a first fin and a second fin disposed on a substrate;
a first type of source/drain feature disposed on the first fin;
a first source/drain contact disposed on the first type of source/drain feature;
a second type of source/drain feature disposed on the second fin;
a second source/drain contact disposed on the second type of source/drain feature, and
wherein a bottommost surface of the first source/drain contact is positioned closer to the substrate than a bottommost surface of the second source/drain contact,
wherein the first type of source/drain feature interfaces with a topmost surface of the first fin, the topmost surface of the first fin facing away from the substrate and positioned at a first height above the substrate, and
wherein the bottommost surface of the first source/drain contact is positioned at a second height above the substrate, the bottommost surface of the first source/drain contact facing the substrate and the second height being less than the first height.