US 12,125,876 B2
Semiconductor device and method
Kuan-Cheng Wang, Toufen Township (TW); and Han-Ti Hsiaw, Zhubei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed on Nov. 18, 2016, as Appl. No. 15/355,783.
Prior Publication US 2018/0145131 A1, May 24, 2018
Int. Cl. H01L 29/06 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/3115 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/8238 (2006.01)
CPC H01L 29/0649 (2013.01) [H01L 21/0217 (2013.01); H01L 21/02321 (2013.01); H01L 21/31116 (2013.01); H01L 21/31155 (2013.01); H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 27/0886 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01); H01L 21/823878 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A method comprising:
forming a fin on a substrate, wherein a top surface of the fin is a first height above the substrate;
forming an isolation region on opposing sidewalls of the fin, wherein the isolation region comprises a dielectric material, wherein a top surface of the isolation region is at least the first height above the substrate;
doping a first portion of the isolation region with carbon to form an upper doped region and a lower doped region, wherein the upper doped region has a concentration of the carbon greater than a concentration of the carbon of the lower doped region, and wherein the upper doped region is farther from the substrate than the lower doped region, and wherein an undoped region of the isolation region is interposed between the substrate and the lower doped region; and
after doping the upper doped region of the isolation region with carbon, removing a second portion of the isolation region to expose a top portion of the fin, wherein the removed second portion of the isolation region comprises at least a portion of the upper doped region.