US 12,125,868 B2
Image sensors with dummy pixel structures
Yu-Wei Chen, Hsinchu (TW); Chung-Chuan Tseng, Hsinchu (TW); Chiao-Chi Wang, Hsinchu (TW); and Chia-Ping Lai, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Apr. 10, 2023, as Appl. No. 18/132,496.
Application 18/132,496 is a division of application No. 17/004,284, filed on Aug. 27, 2020, granted, now 11,626,444.
Claims priority of provisional application 62/982,457, filed on Feb. 27, 2020.
Prior Publication US 2023/0246056 A1, Aug. 3, 2023
Int. Cl. H01L 27/146 (2006.01); H01L 27/148 (2006.01)
CPC H01L 27/1464 (2013.01) [H01L 27/14603 (2013.01); H01L 27/14605 (2013.01); H01L 27/14683 (2013.01); H01L 27/14627 (2013.01); H01L 27/1463 (2013.01); H01L 27/14636 (2013.01); H01L 27/14806 (2013.01); H01L 27/14812 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
depositing a dielectric layer on a substrate;
forming a dummy epitaxial structure and an active epitaxial structure in the dielectric layer and the substrate;
forming first and second capping layers on the dummy and active epitaxial structures, respectively;
doping the active epitaxial structure and the second capping layer;
forming a silicide layer on the doped regions;
depositing an etch stop layer on the silicide layer; and
forming conductive plugs on the silicide layer through the etch stop layer.