US 12,125,864 B2
Image sensor and method of making
Po-Han Chen, Hsinchu (TW); Chen-Chun Chen, Hsinchu (TW); Fu-Cheng Chang, Hisnchu (TW); and Kuo-Cheng Lee, Hsinch (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on May 17, 2023, as Appl. No. 18/319,159.
Application 18/319,159 is a continuation of application No. 16/595,092, filed on Oct. 7, 2019, granted, now 11,676,980.
Claims priority of provisional application 62/753,562, filed on Oct. 31, 2018.
Prior Publication US 2023/0299104 A1, Sep. 21, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 27/146 (2006.01)
CPC H01L 27/14623 (2013.01) [H01L 27/14605 (2013.01); H01L 27/14685 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of making an image sensor, the method comprising:
depositing a shield layer over a substrate, wherein the substrate comprises a first photodiode (PD) and a second PD;
etching the shield layer to define a first recess aligned with the first PD and a second recess aligned with the second PD;
depositing a flicker reduction layer in the first recess and in the second recess; and
etching the flicker reduction layer to remove the flicker reduction layer from the first recess.