US 12,125,840 B2
Non-transitory computer-readable medium, integrated circuit device and method
Chih-Liang Chen, Hsinchu (TW); Shun Li Chen, Tainan (TW); Li-Chun Tien, Tainan (TW); Ting Yu Chen, Hsinchu (TW); and Hui-Zhong Zhuang, Kaohsiung (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Jan. 19, 2023, as Appl. No. 18/156,605.
Application 18/156,605 is a continuation of application No. 16/910,658, filed on Jun. 24, 2020, granted, now 11,574,900.
Prior Publication US 2023/0154917 A1, May 18, 2023
Int. Cl. H01L 27/02 (2006.01); G06F 30/392 (2020.01); H01L 27/092 (2006.01)
CPC H01L 27/0207 (2013.01) [G06F 30/392 (2020.01); H01L 27/092 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A non-transitory computer-readable medium containing thereon a cell library, the cell library comprising:
a plurality of cells configured to be placed in a layout diagram of an integrated circuit (IC), each cell among the plurality of cells comprising:
a first active region inside a boundary of the cell, the first active region extending along a first direction,
at least one gate region inside the boundary, the at least one gate region extending across the first active region along a second direction, the second direction transverse to the first direction, and
a first conductive region overlapping the first active region and a first edge of the boundary, the first conductive region configured to form an electrical connection to the first active region,
wherein the plurality of cells comprises at least one cell a width of which in the first direction is equal to one gate region pitch between adjacent gate regions of the IC.