US 12,125,839 B2
Semiconductor device and layout thereof
Cheng-I Huang, Hsinchu (TW); Ting-Wei Chiang, New Taipei (TW); Shih-Chi Fu, Hsinchu County (TW); Sheng-Fang Cheng, New Taipei (TW); and Jung-Chan Yang, Taoyuan (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Nov. 30, 2020, as Appl. No. 17/107,311.
Application 16/206,746 is a division of application No. 15/172,020, filed on Jun. 2, 2016, granted, now 10,163,882, issued on Dec. 25, 2018.
Application 17/107,311 is a continuation of application No. 16/206,746, filed on Nov. 30, 2018, granted, now 10,854,593.
Claims priority of provisional application 62/268,416, filed on Dec. 16, 2015.
Prior Publication US 2021/0082904 A1, Mar. 18, 2021
Int. Cl. H01L 27/02 (2006.01); G06F 30/39 (2020.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/66 (2006.01)
CPC H01L 27/0207 (2013.01) [G06F 30/39 (2020.01); H01L 27/0886 (2013.01); H01L 29/66545 (2013.01); H01L 21/823431 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first fin formed on a substrate, and comprising a first portion and a second portion that are spaced apart by a first recess, wherein a side of the first portion and a side of the second portion are located at two sides of the first recess, respectively;
a first continuous fin adjacent to the first fin formed on the substrate, and extending along the first portion, the first recess and the second portion; and
a plurality of continuous gates formed on the substrate, and arranged to intersect the first continuous fin and the first fin in a layout view, wherein a first number of the plurality of continuous gates are disposed across the first recess, each of the first number of the plurality of continuous gates is disposed between the two sides of the first recess in the layout view, and the first number is at least 2,
wherein at least two of the plurality of continuous gates are disposed on the first portion or the second portion of the first fin,
in the layout view, two of the plurality of continuous gates cover the side of the first portion of the first fin and the side of the second portion of the first fin located at the two sides of the first recess, respectively,
the first fin further comprises a third portion,
the third portion and the second portion are spaced apart by a second recess, and
a first length of the first continuous fin is substantially equal to a sum of a second length of the first fin, a third length of the first recess and a fourth length of the second recess.