US 12,125,833 B2
Integrated circuit package and method forming same
Shin-Puu Jeng, Hsinchu (TW); Shuo-Mao Chen, New Taipei (TW); and Feng-Cheng Hsu, New Taipei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jul. 3, 2023, as Appl. No. 18/346,319.
Application 18/346,319 is a continuation of application No. 17/022,791, filed on Sep. 16, 2020, granted, now 11,735,572.
Claims priority of provisional application 62/951,240, filed on Dec. 20, 2019.
Prior Publication US 2023/0352463 A1, Nov. 2, 2023
Int. Cl. H01L 25/16 (2023.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/538 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01)
CPC H01L 25/16 (2013.01) [H01L 21/4853 (2013.01); H01L 21/486 (2013.01); H01L 21/565 (2013.01); H01L 23/3128 (2013.01); H01L 23/5381 (2013.01); H01L 23/5384 (2013.01); H01L 24/16 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 2224/16227 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06586 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1434 (2013.01); H01L 2924/19105 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A package comprising:
an interconnect die comprising:
a first plurality of conductive paths extending from a top surface to a bottom surface of the interconnect die; and
a second plurality of conductive paths extending into the interconnect die, each comprising a first end and a second end, wherein both of the first and the second end are at the top surface;
a first package component and a second package component over and bonding to the interconnect die;
a passive device over and bonding to the interconnect die, wherein the first package component is electrically connected to the passive device through a first part of the second plurality of conductive paths; and
a bridge die underlying and bonding to the interconnect die, wherein the bridge die electrically connects the first package component to the second package component through the first plurality of conductive paths.