US 12,125,821 B2
Package having multiple chips integrated therein and manufacturing method thereof
Ming-Fa Chen, Taichung (TW); Sung-Feng Yeh, Taipei (TW); Tzuan-Horng Liu, Taoyuan (TW); and Chao-Wen Shih, Hsinchu County (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Dec. 13, 2022, as Appl. No. 18/080,661.
Application 18/080,661 is a continuation of application No. 16/737,929, filed on Jan. 9, 2020, granted, now 11,562,983.
Claims priority of provisional application 62/867,871, filed on Jun. 28, 2019.
Prior Publication US 2023/0116818 A1, Apr. 13, 2023
Int. Cl. H01L 25/065 (2023.01); H01L 21/56 (2006.01); H01L 21/78 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/48 (2006.01); H01L 25/00 (2006.01)
CPC H01L 25/0652 (2013.01) [H01L 21/563 (2013.01); H01L 21/78 (2013.01); H01L 23/3121 (2013.01); H01L 23/481 (2013.01); H01L 24/97 (2013.01); H01L 25/50 (2013.01); H01L 2225/06541 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A package, comprising:
an integrated circuit, comprising:
a first chip comprising a semiconductor substrate, wherein the semiconductor substrate of the first chip extends continuously from an edge of the first chip to another edge of the first chip;
a dummy chip disposed over the first chip, wherein the dummy chip comprises a semiconductor substrate, the semiconductor substrate of the dummy chip extends continuously from an edge of the dummy chip to another edge of the dummy chip, and sidewalls of the first chip are aligned with sidewalls of the dummy chip;
a second chip and a third chip sandwiched between the first chip and the dummy chip, wherein a thickness of the second chip is substantially equal to a thickness of the third chip; and
a first bonding film sandwiched between the dummy chip and the second chip, wherein sidewalls of the first bonding film are aligned with sidewalls of the second chip, and the first bonding film is free of a metallic structure embedded therein.