US 12,125,820 B2
Through-dielectric vias for direct connection and method forming same
Ming-Fa Chen, Taichung (TW); Chuan-An Cheng, Zhubei (TW); Sung-Feng Yeh, Taipei (TW); and Chih-Chia Hu, Taipei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Apr. 13, 2021, as Appl. No. 17/229,283.
Claims priority of provisional application 63/148,642, filed on Feb. 12, 2021.
Prior Publication US 2022/0262766 A1, Aug. 18, 2022
Int. Cl. H01L 23/28 (2006.01); H01L 21/56 (2006.01); H01L 21/683 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/48 (2006.01); H01L 23/538 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01)
CPC H01L 25/0652 (2013.01) [H01L 21/565 (2013.01); H01L 21/568 (2013.01); H01L 21/6835 (2013.01); H01L 21/76898 (2013.01); H01L 23/3128 (2013.01); H01L 23/481 (2013.01); H01L 23/5386 (2013.01); H01L 23/5389 (2013.01); H01L 24/08 (2013.01); H01L 24/80 (2013.01); H01L 25/50 (2013.01); H01L 2221/68372 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/80006 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06548 (2013.01); H01L 2225/06586 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
bonding a tier-1 device die to a first carrier through fusion bonding;
forming a first gap-filling region to encapsulate the tier-1 device die;
forming a first redistribution structure over and electrically connected to the tier-1 device die;
bonding a first tier-2 device die to the tier-1 device die, wherein the first tier-2 device die is over the tier-1 device die, and the first tier-2 device die extends laterally beyond a corresponding edge of the tier-1 device die;
forming a second gap-filling region to encapsulate the first tier-2 device die;
removing the first carrier;
forming a first through-dielectric via penetrating through the first gap-filling region, wherein the first through-dielectric via is overlapped by, and is electrically connected to the first tier-2 device die;
forming a second through-dielectric via to penetrate through the first gap-filling region, the first redistribution structure, and the second gap-filling region, wherein the first through-dielectric via and the second through-dielectric via are formed from different directions; and
forming a second redistribution structure, wherein the first redistribution structure and the second redistribution structure are on opposing sides of the tier-1 device die.