US 12,125,818 B2
Technologies for plasma oxidation protection during hybrid bonding of semiconductor devices
Jack Rogers, Albany, NY (US); Satohiko Hoshino, Albany, NY (US); and Nathan Antonovich, Albany, NY (US)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Feb. 10, 2022, as Appl. No. 17/669,236.
Prior Publication US 2023/0253361 A1, Aug. 10, 2023
Int. Cl. H01L 21/00 (2006.01); H01L 23/00 (2006.01)
CPC H01L 24/80 (2013.01) [H01L 24/08 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/80013 (2013.01); H01L 2224/8002 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2924/0509 (2013.01)] 22 Claims
OG exemplary drawing
 
1. A method for hybrid bonding a semiconductor device, the method comprising:
forming a blocking layer on a metallic bonding pad formed in a bonding surface of a first semiconductor device;
performing a surface treatment on the bonding surface of the first semiconductor device, wherein the surface treatment comprises creating a plurality of dangling bonds on the bonding surface of the first semiconductor device to increase a bonding strength of the bonding surface of the first semiconductor device and substantially remove the blocking layer from the metallic bonding pad, and wherein the blocking layer limits exposure of the metallic bonding pad to the surface treatment; and
contacting the bonding surface of the first semiconductor device to a bonding surface of second semiconductor device.