US 12,125,809 B2
Semiconductor device including dummy conductive cells
Wei-Yu Ma, Taitung (TW); Hui-Mei Chou, Hsinchu County (TW); and Kuo-Ji Chen, New Taipei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Apr. 23, 2021, as Appl. No. 17/239,215.
Application 16/714,542 is a division of application No. 16/046,449, filed on Jul. 26, 2018, granted, now 10,510,692, issued on Dec. 17, 2019.
Application 16/046,449 is a division of application No. 14/062,845, filed on Oct. 24, 2013, granted, now 10,043,767, issued on Aug. 7, 2018.
Application 17/239,215 is a continuation of application No. 16/714,542, filed on Dec. 13, 2019, granted, now 10,991,663.
Prior Publication US 2021/0257316 A1, Aug. 19, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/58 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 27/02 (2006.01)
CPC H01L 23/585 (2013.01) [H01L 23/522 (2013.01); H01L 23/5286 (2013.01); H01L 27/0207 (2013.01); H01L 2924/0002 (2013.01)] 20 Claims
OG exemplary drawing
 
8. A semiconductor device, comprising:
a plurality of metal lines formed in metal layers that are adjacent to each other, and comprising a first metal line;
a plurality of first dummy conductive cells formed in an empty area arranged between the metal layers, and separated from each other; and
a second dummy conductive cell formed in the empty area, and separated from the plurality of first dummy conductive cells,
wherein in plan view, the plurality of first dummy conductive cells are fully overlapped with the first metal line, and provide a first density within the empty area different from a second density within the empty area that is provided by the second dummy conductive cell.