US 12,125,798 B2
Semiconductor package and method
Chen-Hua Yu, Hsinchu (TW); Jeng-Shien Hsieh, Kaohsiung (TW); Chuei-Tang Wang, Taichung (TW); and Chieh-Yen Chen, Taipei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Apr. 28, 2021, as Appl. No. 17/242,704.
Prior Publication US 2022/0352082 A1, Nov. 3, 2022
Int. Cl. H01L 23/538 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 21/683 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 25/065 (2023.01)
CPC H01L 23/5389 (2013.01) [H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/486 (2013.01); H01L 21/565 (2013.01); H01L 21/568 (2013.01); H01L 21/6835 (2013.01); H01L 23/3128 (2013.01); H01L 23/5383 (2013.01); H01L 23/5384 (2013.01); H01L 23/5386 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 25/0652 (2013.01); H01L 2221/68372 (2013.01); H01L 2224/214 (2013.01); H01L 2224/215 (2013.01); H01L 2225/06548 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first plurality of dies, the first plurality of dies being on a wafer;
a first redistribution structure over the first plurality of dies, the first redistribution structure comprising a first plurality of conductive features, each die of the first plurality of dies being bonded to respective conductive features of the first plurality of conductive features by metal-metal bonds on a bottom side of the first redistribution structure, a first die of the first plurality of dies being adjacent to a second die of the first plurality of dies, the first die being electrically connected to the second die by a first electrical interconnect through the first redistribution structure, and a third die of the first plurality of dies being separated from the first die by another die of the first plurality of dies, the third die being electrically connected to the first die by a second electrical interconnect through the first redistribution structure;
a second plurality of dies, the second plurality of dies being on a top side of the first redistribution structure opposite the bottom side, each die of the second plurality of dies being bonded to respective conductive features of the first plurality of conductive features in the first redistribution structure by metal-metal bonds on the top side;
a molding compound encapsulating the first plurality of dies, the first redistribution structure, the second plurality of dies, and the wafer; and
a second redistribution structure over the molding compound, the first plurality of dies, the first redistribution structure, the second plurality of dies, and the wafer, wherein the second redistribution structure comprises a second plurality of conductive features and a plurality of dielectric layers.