US 12,125,784 B2
Interconnect structures
Cyprian Emeka Uzoh, San Jose, CA (US); Gaius Gillman Fountain, Jr., Youngsville, NC (US); and Jeremy Alfred Theil, Mountain View, CA (US)
Assigned to Adeia Semiconductor Bonding Technologies Inc., San Jose, CA (US)
Filed by ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC., San Jose, CA (US)
Filed on Aug. 17, 2023, as Appl. No. 18/451,366.
Application 18/451,366 is a continuation of application No. 17/486,633, filed on Sep. 27, 2021, granted, now 11,756,880.
Application 17/486,633 is a continuation of application No. 16/657,696, filed on Oct. 18, 2019, granted, now 11,158,573, issued on Oct. 26, 2021.
Claims priority of provisional application 62/902,207, filed on Sep. 18, 2019.
Claims priority of provisional application 62/748,653, filed on Oct. 22, 2018.
Prior Publication US 2024/0047344 A1, Feb. 8, 2024
Int. Cl. H01L 23/48 (2006.01); H01L 23/00 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01); H01L 23/522 (2006.01)
CPC H01L 23/5226 (2013.01) [H01L 23/298 (2013.01); H01L 23/3178 (2013.01); H01L 24/20 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A bonded structure comprising:
a first element including a first dielectric layer, a first conductive structure at least partially embedded in the first dielectric layer, and a second conductive structure at least partially embedded in the first dielectric layer, a cross-sectional width of the first conductive structure being greater than a width of the second conductive structure;
a second element including a second dielectric layer, a third conductive structure at least partially embedded in the second dielectric layer, and a fourth conductive structure at least partially embedded in the second dielectric layer, the first dielectric layer and the second dielectric layer being directly bonded to one another without an intervening adhesive, the first conductive structure and the third conductive structure being in contact with and bonded to one another; and
an embedded layer disposed partially between the first and the third conductive structures.