US 12,125,769 B2
Package structure and method of fabricating the same
Hsien-Wei Chen, Hsinchu (TW); Jie Chen, New Taipei (TW); Ming-Fa Chen, Taichung (TW); and Sung-Feng Yeh, Taipei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jun. 30, 2022, as Appl. No. 17/853,953.
Application 17/853,953 is a continuation of application No. 16/856,044, filed on Apr. 23, 2020, granted, now 11,417,587.
Claims priority of provisional application 62/928,347, filed on Oct. 30, 2019.
Prior Publication US 2022/0336329 A1, Oct. 20, 2022
Int. Cl. H01L 23/48 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01)
CPC H01L 23/481 (2013.01) [H01L 21/486 (2013.01); H01L 21/56 (2013.01); H01L 23/3114 (2013.01); H01L 23/3135 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A package structure, comprising:
a first semiconductor die;
a first insulating encapsulation laterally encapsulating a lower portion of the first semiconductor die;
a bonding film disposed on the first insulating encapsulation and laterally encapsulating an upper portion of the first semiconductor die, wherein a lower portion of a sidewall surface of the first semiconductor die is in direct contact with the first insulating encapsulation, and an upper portion of the sidewall surface of the first semiconductor die is in direct contact with the bonding film;
a second semiconductor die disposed on the first semiconductor die and the bonding film; and
a second insulating encapsulation laterally encapsulating the second semiconductor die, wherein sidewalls of the first insulating encapsulation are substantially aligned with sidewalls of the second insulating encapsulation and sidewalls of the bonding film.