US 12,125,747 B2
Bottom-up formation of contact plugs
Yen-Yu Chen, Taichung (TW); and Chung-Liang Cheng, Changhua (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jul. 25, 2022, as Appl. No. 17/814,737.
Application 17/814,737 is a division of application No. 16/738,337, filed on Jan. 9, 2020, granted, now 11,469,139.
Claims priority of provisional application 62/903,424, filed on Sep. 20, 2019.
Prior Publication US 2022/0359285 A1, Nov. 10, 2022
Int. Cl. H01L 21/768 (2006.01); H01L 21/225 (2006.01); H01L 21/311 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/45 (2006.01)
CPC H01L 21/76879 (2013.01) [H01L 21/2254 (2013.01); H01L 21/76843 (2013.01); H01L 21/76856 (2013.01); H01L 21/76865 (2013.01); H01L 21/76876 (2013.01); H01L 21/76882 (2013.01); H01L 29/401 (2013.01); H01L 29/41791 (2013.01); H01L 21/31122 (2013.01); H01L 21/76831 (2013.01); H01L 29/456 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
a contact etch stop layer;
a first inter-layer dielectric over the contact etch stop layer;
a dielectric spacer in the contact etch stop layer and the first inter-layer dielectric;
a contact plug in the contact etch stop layer and the first inter-layer dielectric, wherein the contact plug is separated from the first inter-layer dielectric by the dielectric spacer, and the contact plug comprising:
a metal nitride layer, wherein the metal nitride layer physically contacts the dielectric spacer;
a silicon-containing layer over the metal nitride layer, wherein the silicon-containing layer comprises elemental silicon therein; and
a homogeneous metallic material over the silicon-containing layer.