US 12,125,710 B2
Substrate processing method and substrate processing apparatus
Sho Kumakura, Miyagi (JP); and Yusuke Takino, Miyagi (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Jan. 27, 2022, as Appl. No. 17/586,251.
Claims priority of application No. 2021-013072 (JP), filed on Jan. 29, 2021.
Prior Publication US 2022/0246440 A1, Aug. 4, 2022
Int. Cl. H01L 21/311 (2006.01); H01J 37/32 (2006.01); H01L 21/3065 (2006.01)
CPC H01L 21/31144 (2013.01) [H01J 37/32449 (2013.01); H01L 21/3065 (2013.01); H01L 21/31116 (2013.01); H01J 2237/334 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A substrate processing method comprising:
(a) providing a substrate including an etching target film, a first mask formed on the etching target film, and a second mask formed on the first mask, the second mask being different in film type from the first mask and having an opening;
(b) selectively etching the first mask with respect to the second mask, thereby forming an opening in the first mask such that an opening dimension of at least a portion of the first mask is larger than an opening dimension of a bottom of the second mask; and
(c) etching the etching target film.