US 12,125,707 B2
Fin field-effect transistor device and method of forming
Yu-Li Lin, Kaohsiung (TW); Chih-Teng Liao, Hsinchu (TW); Jui Fu Hsieh, Zhubei (TW); Chih Hsuan Cheng, Houlong Township (TW); and Tzu-Chan Weng, Kaohsiung (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jul. 25, 2022, as Appl. No. 17/814,607.
Application 17/814,607 is a division of application No. 16/916,465, filed on Jun. 30, 2020, granted, now 11,532,481.
Prior Publication US 2022/0367196 A1, Nov. 17, 2022
Int. Cl. H01L 21/3065 (2006.01); H01J 37/32 (2006.01); H01L 21/8234 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 21/3065 (2013.01) [H01J 37/32174 (2013.01); H01L 21/823431 (2013.01); H01L 29/6681 (2013.01); H01L 29/785 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a substrate;
a fin protruding above the substrate;
a gate structure over the fin;
a gate spacer along a sidewall of the gate structure, wherein a bottom surface of the gate spacer facing the substrate extends closer to the substrate than an upper surface of the fin distal from the substrate; and
a source/drain region in the fin and adjacent to the gate spacer, wherein an upper surface of the source/drain region distal from the substrate is level with the bottom surface of the gate spacer.