US 12,125,701 B2
Large dimension silicon carbide single crystalline materials with reduced crystallographic stress
Yuri Khlebnikov, Raleigh, NC (US); Varad R. Sakhalkar, Morrisville, NC (US); Caleb A. Kent, Durham, NC (US); Valeri F. Tsvetkov, Durham, NC (US); Michael J. Paisley, Raleigh, NC (US); Oleksandr Kramarenko, Durham, NC (US); Matthew David Conrad, Durham, NC (US); Eugene Deyneka, Raleigh, NC (US); Steven Griffiths, Morrisville, NC (US); Simon Bubel, Carrboro, NC (US); Adrian R. Powell, Cary, NC (US); Robert Tyler Leonard, Raleigh, NC (US); Elif Balkas, Cary, NC (US); Curt Progl, Raleigh, NC (US); Michael Fusco, Wake Forest, NC (US); Alexander Shveyd, Chapel Hill, NC (US); Kathy Doverspike, Cary, NC (US); and Lukas Nattermann, Chapel Hill, NC (US)
Assigned to Wolfspeed, Inc., Durham, NC (US)
Filed by Wolfspeed, Inc., Durham, NC (US)
Filed on Dec. 15, 2020, as Appl. No. 17/121,863.
Prior Publication US 2022/0189768 A1, Jun. 16, 2022
Int. Cl. C30B 29/36 (2006.01); C30B 23/02 (2006.01); H01L 21/02 (2006.01); C30B 23/00 (2006.01)
CPC H01L 21/02378 (2013.01) [C30B 23/02 (2013.01); C30B 29/36 (2013.01); H01L 21/0242 (2013.01); C30B 23/005 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A silicon carbide (SiC) wafer comprising a dimension of at least 195 millimeters (mm) and a total line density of basal plane dislocations that are aligned within 5 degrees of a {1100} family of crystal planes of less than 1000 centimeters per centimeter cubed (cm/cm3) for a first area bounded by a radius from a center of the SiC wafer, the radius comprising at least 50% of a wafer radius of the SiC wafer.