| CPC H01L 21/02019 (2013.01) [H01L 21/02271 (2013.01); H01L 21/02389 (2013.01)] | 10 Claims |
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1. A method of forming a plurality of semiconductor devices overlying a substrate that can be used two or more times comprising:
providing the substrate comprising gallium nitride (GaN) or silicon carbide (SiC);
forming a merge layer in or below an entire surface of the substrate wherein the merge layer is configured to provide a surface that comprises a majority surface of merged epitaxial lateral overgrowth (MELO);
forming an exfoliation layer in or below the surface of the substrate;
growing one or more device layers in an epitaxial reactor overlying the merge layer wherein the one or more device layers are formed by vertical epitaxy;
forming the plurality of semiconductor devices wherein the substrate is configured to separate from the merge layer at the exfoliation layer; and
polishing a surface of the substrate after exfoliation to prepare the substrate for reuse.
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