CPC H01J 37/32146 (2013.01) [H01J 37/32183 (2013.01)] | 17 Claims |
1. A plasma processing apparatus comprising:
a chamber;
a first matching circuit coupled to the chamber;
a second matching circuit coupled to the chamber;
a first RF generator coupled to the first matching circuit, and configured to generate a first RF pulsed signal including a plurality of first pulse cycles, each first pulse cycle including a first period, a second period, and a third period, and the first RF pulsed signal having a first power level in the first period, a second power level in the second period, and a third power level in the third period;
a second RF generator coupled to the second matching circuit, and configured to generate a second RF pulsed signal including a plurality of second pulse cycles, each second pulse cycle including a fourth period and a fifth period, the second RF pulsed signal having a frequency lower than a frequency of the first RF pulsed signal and having a fourth power level in the fourth period and a fifth power level in the fifth period, and the fourth period being set not to overlap with the first period; and
a third RF generator coupled to the second matching circuit, and configured to generate a third RF pulsed signal including a plurality of third pulse cycles, each third pulse cycle including a sixth period and a seventh period, the third RF pulsed signal having a frequency lower than the frequency of the second RF pulsed signal and having a sixth power level in the sixth period and a seventh power level in the seventh period, and the sixth period being set not to overlap with the first period and the fourth period.
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