US 12,125,665 B2
Ion implantation system
Kai-Yun Yang, Tainan (TW); Chen Chi Wu, Hsinchu (TW); Ching I Li, Tainan (TW); Min-Chang Ching, Zhubei (TW); and Hung-Ta Huang, Tainan (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED, Hsin-Chu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED, Hsin-Chu (TW)
Filed on May 12, 2022, as Appl. No. 17/742,608.
Prior Publication US 2023/0369009 A1, Nov. 16, 2023
Int. Cl. H01J 37/08 (2006.01); H01J 37/317 (2006.01); H01J 37/32 (2006.01); H01L 21/265 (2006.01)
CPC H01J 37/08 (2013.01) [H01J 37/3171 (2013.01); H01J 37/32064 (2013.01); H01L 21/26513 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A plasma flood gun, comprising:
a filament to emit first electrons based on a first filament current induced in the filament to heat the filament to a first temperature at a first time, where the first electrons interact with an inert gas in an arc plasma chamber to generate a first plasma in the arc plasma chamber at the first time;
a filament resistance meter, electrically coupled in-situ across the filament, to measure a first filament resistance of the filament during generation of the first plasma at the first time; and
a filament current source electrically coupled in series with the filament to adjust, based on the first filament resistance, the first filament current induced in the filament at the first time to a second filament current induced in the filament at a second time to generate a second plasma in the arc plasma chamber at the second time.