US 12,125,512 B2
Doping process to refine grain size for smoother BiSb film surface
Quang Le, San Jose, CA (US); Cherngye Hwang, San Jose, CA (US); Brian R. York, San Jose, CA (US); Randy G. Simmons, San Jose, CA (US); Xiaoyong Liu, San Jose, CA (US); Kuok San Ho, Emerald Hills, CA (US); Hisashi Takano, San Jose, CA (US); Michael A. Gribelyuk, San Jose, CA (US); and Xiaoyu Xu, San Jose, CA (US)
Assigned to Western Digital Technologies, Inc., San Jose, CA (US)
Filed by Western Digital Technologies, Inc., San Jose, CA (US)
Filed on Jun. 30, 2022, as Appl. No. 17/854,568.
Claims priority of provisional application 63/292,582, filed on Dec. 22, 2021.
Prior Publication US 2023/0197132 A1, Jun. 22, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 11/16 (2006.01); G01R 33/09 (2006.01); G11B 5/39 (2006.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01); H10N 50/85 (2023.01); H10N 52/00 (2023.01); H10N 52/01 (2023.01); H10N 52/80 (2023.01)
CPC G11C 11/161 (2013.01) [G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); H10B 61/00 (2023.02); H10N 50/10 (2023.02); H10N 50/85 (2023.02); H10N 52/00 (2023.02); H10N 52/01 (2023.02); H10N 52/80 (2023.02)] 23 Claims
OG exemplary drawing
 
1. A spin-orbit torque (SOT) device, comprising:
a substrate; and
a doped bismuth antimony (BiSbE) layer disposed over the substrate, wherein the doped BiSbE layer has a (012) orientation, wherein E is a dopant, and wherein the dopant is present in an amount of between about 0.5 atomic percent and about 5 atomic percent of the doped BiSbE layer.