US 12,125,508 B2
Topological insulator based spin torque oscillator reader
Xiaoyong Liu, San Jose, CA (US); Zhanjie Li, Pleasanton, CA (US); Quang Le, San Jose, CA (US); Brian R. York, San Jose, CA (US); Cherngye Hwang, San Jose, CA (US); Kuok San Ho, Emerald Hills, CA (US); and Hisashi Takano, Fujisawa (JP)
Assigned to Western Digital Technologies, Inc., San Jose, CA (US)
Filed by Western Digital Technologies, Inc., San Jose, CA (US)
Filed on Sep. 11, 2023, as Appl. No. 18/244,555.
Application 18/244,555 is a division of application No. 17/828,226, filed on May 31, 2022, granted, now 11,783,853.
Prior Publication US 2023/0419990 A1, Dec. 28, 2023
Int. Cl. G11B 5/39 (2006.01); G11B 5/11 (2006.01)
CPC G11B 5/3909 (2013.01) [G11B 5/11 (2013.01); G11B 5/3912 (2013.01); G11B 5/3932 (2013.01); G11B 5/3967 (2013.01); G11B 2005/3996 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A sensor, comprising:
a seed layer;
a magnetic tunnel junction (MTJ) structure disposed over the seed layer;
a first buffer layer disposed over the MTJ structure;
a bismuth antimony (BiSb) layer disposed over the first buffer layer;
a second buffer layer disposed over the BiSb layer;
a capping layer disposed over the second buffer layer, wherein the seed layer, the MTJ structure, the first buffer layer, the BiSb layer, the second buffer layer, and the capping layer are disposed at a media facing surface (MFS); and
an antiferromagnetic (AFM) layer, wherein the AFM layer is adjacent to the MTJ structure.