US 12,124,178 B2
Lithography system and method
Hao-Yu Lan, Taipei (TW); Po-Chung Cheng, Chiayi County (TW); Ching-Juinn Huang, Changhua County (TW); Tzung-Chi Fu, Miaoli County (TW); and Tsung-Yen Lee, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on May 1, 2023, as Appl. No. 18/310,483.
Application 17/459,357 is a division of application No. 16/901,506, filed on Jun. 15, 2020, granted, now 11,106,146, issued on Aug. 31, 2021.
Application 18/310,483 is a continuation of application No. 17/459,357, filed on Aug. 27, 2021, granted, now 11,675,280.
Application 16/901,506 is a continuation of application No. 16/516,452, filed on Jul. 19, 2019, granted, now 10,684,561, issued on Jun. 16, 2020.
Claims priority of provisional application 62/751,724, filed on Oct. 29, 2018.
Prior Publication US 2023/0266682 A1, Aug. 24, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 9/00 (2006.01)
CPC G03F 9/7019 (2013.01) 20 Claims
OG exemplary drawing
 
1. A system, comprising:
an exposing device configured to generate a real-time image, including a plurality of first align marks, of a mask; and
an adjusting device configured to adjust an off-set of the mask from a pre-determined position to be smaller than a minimum aligning distance according to the plurality of first align marks and a plurality of align marks on a substrate, and further to move the mask closer to the pre-determined position to have a displacement, less than a minimum mapping distance, from the pre-determined position according to the real-time image and a reference image of the mask.