US 12,124,083 B2
Semiconductor structure with multi-layers film
Chih-Tsung Shih, Hsinchu (TW); Wei-Kang Liu, Taichung (TW); Sui-Ying Hsu, New Taipei (TW); Jing-Hwang Yang, Hsinchu County (TW); and Yingkit Felix Tsui, Cupertino, CA (US)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Aug. 3, 2022, as Appl. No. 17/817,041.
Prior Publication US 2024/0045141 A1, Feb. 8, 2024
Int. Cl. G02B 6/124 (2006.01); G02B 6/12 (2006.01)
CPC G02B 6/124 (2013.01) [G02B 2006/12107 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a substrate;
a grating coupler structure over the substrate; and
a multi-layers film structure over the grating coupler structure, comprising:
a first layer comprising a first refractive index;
a second layer over the first layer and comprising a second refractive index; and
a third layer over the second layer and comprising a third refractive index; and
wherein the second refractive index is greater than the first refractive index and is greater than the third refractive index of the third layer, and
wherein a thickness of each layer of the multi-layers film structure is within a range from λ/4 to λ/2, λ is a wavelength of light.