CPC G02B 5/28 (2013.01) [G02B 5/285 (2013.01); G02B 6/4206 (2013.01); G02B 27/0025 (2013.01); H01L 27/14625 (2013.01); H01L 31/0232 (2013.01); H04N 25/70 (2023.01)] | 13 Claims |
1. A solid-state imaging device, comprising:
a semiconductor substrate including a photoelectric conversion element;
a plurality of pillar structures above the semiconductor substrate in a cross-sectional view; and
a filter element between the semiconductor substrate and the plurality of pillar structures in the cross-sectional view, wherein
the plurality of pillar structures is configured to correct a first direction of an incident light to a light in a second direction, and
the second direction is perpendicular to the photoelectric conversion element, and wherein
a correcting power, to correct the first direction of the incident light to the light in the second direction, varies based on a size of image height with reference to a center of an imaging surface of the solid-state imaging device.
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