US 12,123,871 B2
Biosensor system with integrated microneedle
Allen Timothy Chang, Hsinchu (TW); Jui-Cheng Huang, Hsinchu (TW); Wen-Chuan Tai, Hsinchu (TW); and Yu-Jie Huang, Kaohsiung (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Nov. 25, 2020, as Appl. No. 17/104,059.
Claims priority of provisional application 62/967,850, filed on Jan. 30, 2020.
Prior Publication US 2021/0239688 A1, Aug. 5, 2021
Int. Cl. G01N 33/543 (2006.01); G01N 27/414 (2006.01)
CPC G01N 33/54373 (2013.01) [G01N 27/4145 (2013.01); G01N 27/4148 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A biosensor system package comprising:
a transistor structure in a semiconductor layer having a front side and a back side, the transistor structure comprising a channel region;
a buried oxide (BOX) layer on the back side of the semiconductor layer, wherein the buried oxide layer has an opening over the channel region, and an interface layer covers the channel region;
a multi-layer interconnect (MLI) structure on the front side of the semiconductor layer, the transistor structure being electrically connected to the MLI structure; and
a cap structure attached to the buried oxide layer, the cap structure comprising a silicon substrate attached to the buried oxide layer and a dielectric layer on the silicon substrate, the silicon substrate and the dielectric layer are a wall of a fluid chamber that has the dielectric layer inside the fluid chamber and the silicon substrate and the dielectric layer are a microneedle connected to the wall of the fluid chamber and that extends away from the wall of the fluid chamber, wherein the dielectric layer lines a microneedle channel of the microneedle that extends from the fluid chamber, through the wall of the fluid chamber and through the microneedle.