US 12,123,779 B2
Far infrared (FIR) sensor device and manufacturing method thereof and determination method of thickness of sensor dielectric layer thereof
Ming-Han Tsai, Hsinchu (TW); and Chih-Fan Hu, Hsinchu (TW)
Assigned to PIXART IMAGING INCORPORATION, Hsinchu (TW)
Filed by PixArt Imaging Incorporation, Hsinchu (TW)
Filed on Feb. 21, 2022, as Appl. No. 17/676,656.
Claims priority of application No. 110116949 (TW), filed on May 11, 2021.
Prior Publication US 2022/0364927 A1, Nov. 17, 2022
Int. Cl. G01J 5/02 (2022.01); G01J 5/12 (2006.01); H01L 31/101 (2006.01); H01L 31/18 (2006.01)
CPC G01J 5/024 (2013.01) [G01J 5/12 (2013.01); H01L 31/101 (2013.01); H01L 31/18 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A far infrared (FIR) sensor device, comprising:
a sensor region, which is formed on a substrate, and is configured to operably sense a far infrared signal; and
a sensor dielectric layer, which is formed on the sensor region, wherein a thickness of the sensor dielectric layer is determined by a sacrificial metal layer;
wherein the FIR sensor device is manufactured by a CMOS process, a periphery circuit is formed on the substrate, wherein the periphery circuit includes at least one metal oxide semiconductor (MOS) device and a plurality of metal layers, and wherein one of the plurality of metal layers and the sacrificial metal layer are formed by a same metal deposition process step.