US 12,123,091 B2
Substrate processing apparatus and method of manufacturing semiconductor device
Takayuki Nakada, Toyama (JP); Takashi Nogami, Toyama (JP); Tomoshi Taniyama, Toyama (JP); and Daigi Kamimura, Toyama (JP)
Assigned to KOKUSAI ELECTRIC CORPORATION, Tokyo (JP)
Filed by KOKUSAI ELECTRIC CORPORATION, Tokyo (JP)
Filed on Sep. 28, 2022, as Appl. No. 17/954,954.
Application 17/954,954 is a continuation of application No. 16/555,618, filed on Aug. 29, 2019, granted, now 11,512,392.
Application 16/555,618 is a continuation of application No. 15/632,678, filed on Jun. 26, 2017, granted, now 10,508,336, issued on Dec. 17, 2019.
Application 15/632,678 is a continuation of application No. PCT/JP2016/051530, filed on Jan. 20, 2016.
Claims priority of application No. 2015-009394 (JP), filed on Jan. 21, 2015.
Prior Publication US 2023/0017917 A1, Jan. 19, 2023
Int. Cl. C23C 16/44 (2006.01); C23C 16/455 (2006.01); C23C 16/54 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01); H01L 21/677 (2006.01)
CPC C23C 16/4401 (2013.01) [C23C 16/4412 (2013.01); C23C 16/45502 (2013.01); C23C 16/54 (2013.01); H01L 21/02365 (2013.01); H01L 21/67109 (2013.01); H01L 21/67739 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A substrate processing apparatus comprising:
a process chamber in which a substrate supported by a substrate retainer and a heat insulator disposed under the substrate are accommodated and the substrate is processed;
a transfer chamber where the substrate is loaded into the substrate retainer;
a gas supply mechanism configured to supply a gas into the transfer chamber, the gas supply mechanism comprising: a first gas supply mechanism configured to supply the gas into an upper region of the transfer chamber, where the substrate retainer is unloaded from the process chamber; and a second gas supply mechanism configured to supply the gas into a lower region of the transfer chamber, where the heat insulator is unloaded;
a first exhaust unit disposed beside the substrate retainer unloaded such that the gas flows horizontally from the first gas supply mechanism to the first exhaust unit through the upper region; and
a second exhaust unit comprising an opening disposed on a bottom of the transfer chamber and under the heat insulator, wherethrough the gas is directly exhausted from the bottom of the transfer chamber to a duct such that the gas flows downward around the heat insulator unloaded,
wherein no opening is disposed beside the heat insulator unloaded to exhaust the gas.