US 11,800,824 B2
Low temperature silicon nitride/silicon oxynitride stack film with tunable dielectric constant
Maribel Maldonado-Garcia, San Jose, CA (US); Cong Trinh, Santa Clara, CA (US); and Mihaela A. Balseanu, Sunnyvale, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Mar. 24, 2021, as Appl. No. 17/210,657.
Prior Publication US 2022/0310909 A1, Sep. 29, 2022
Int. Cl. H10N 70/00 (2023.01); H10N 70/20 (2023.01)
CPC H10N 70/801 (2023.02) [H10N 70/011 (2023.02); H10N 70/231 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A method of forming a stack, the method comprising:
forming an encapsulation layer on the stack on a substrate, the substrate having at least one feature, the encapsulation layer comprising one or more of silicon nitride (SiN) or silicon carbonitride (SiCN); and
oxidizing the encapsulation layer to form a dielectric layer having a dielectric constant in a range of from 4.0 to less than 7.0,
wherein the substrate comprises one or more of a chalcogen, carbon, and a metal and the stack comprises at least one material that is sensitive to air or moisture, and each of the stack and the substrate is substantially undamaged.