CPC H10B 43/27 (2023.02) [H01L 21/76224 (2013.01); H01L 29/0649 (2013.01)] | 20 Claims |
1. A microelectronic device, comprising:
a stack structure comprising a vertically alternating sequence of insulative structures and conductive structures arranged in tiers;
a pair of slit structures extending through the stack structure to define a block;
a series of pillars within the block, at least one of the pillars of the series in electrical communication with an additional conductive structure and comprising a channel material; and
an isolation structure extending into an upper portion of the at least one of the pillars.
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