US 11,800,717 B2
Microelectronic devices including isolation structures protruding into upper pillar portions, and related methods and systems
Matthew J. King, Boise, ID (US); David A. Daycock, Singapore (SG); Yoshiaki Fukuzumi, Tokyo (JP); Albert Fayrushin, Boise, ID (US); Richard J. Hill, Boise, ID (US); Chandra S. Tiwari, Boise, ID (US); and Jun Fujiki, Tokyo (JP)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on May 2, 2022, as Appl. No. 17/661,659.
Application 17/661,659 is a continuation of application No. 17/007,951, filed on Aug. 31, 2020, granted, now 11,322,516.
Prior Publication US 2022/0262820 A1, Aug. 18, 2022
Int. Cl. H01L 21/76 (2006.01); H01L 29/06 (2006.01); H10B 43/27 (2023.01); H01L 21/762 (2006.01)
CPC H10B 43/27 (2023.02) [H01L 21/76224 (2013.01); H01L 29/0649 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A microelectronic device, comprising:
a stack structure comprising a vertically alternating sequence of insulative structures and conductive structures arranged in tiers;
a pair of slit structures extending through the stack structure to define a block;
a series of pillars within the block, at least one of the pillars of the series in electrical communication with an additional conductive structure and comprising a channel material; and
an isolation structure extending into an upper portion of the at least one of the pillars.