US 11,800,626 B2
Shock wave visualization for extreme ultraviolet plasma optimization
Yen-Shuo Su, Hsinchu (TW); Jen-Hao Yeh, Hsinchu (TW); Jhan-Hong Yeh, Hsinchu (TW); Ting-Ya Cheng, Taipei (TW); Henry Yee Shian Tong, Hsinchu (TW); Chun-Lin Chang, Zhubei (TW); Han-Lung Chang, Kaohsiung (TW); Li-Jui Chen, Hsinchu (TW); and Po-Chung Cheng, Longxing Village (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jul. 26, 2022, as Appl. No. 17/874,278.
Application 17/874,278 is a continuation of application No. 16/655,116, filed on Oct. 16, 2019, granted, now 11,452,197.
Claims priority of provisional application 62/752,289, filed on Oct. 29, 2018.
Prior Publication US 2022/0361311 A1, Nov. 10, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H05G 2/00 (2006.01); G01V 8/12 (2006.01)
CPC H05G 2/008 (2013.01) [G01V 8/12 (2013.01); H05G 2/005 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
irradiating a first target droplet in an extreme ultraviolet (EUV) light source apparatus of an EUV lithography tool with a laser beam to generate a plasma and a shock wave generated by the plasma;
illuminating the shock wave with an illumination light, which is a collimated light obtained from a source laser beam;
detecting the shock wave generated by the plasma of the first target droplet using a shock wave detection module;
determining an intensity of light detected at the shock wave detection module; and
when the intensity of light detected at the shock wave detection module is less than a first threshold amount or greater than a second threshold amount adjusting an amount of illumination light.