US 11,799,436 B2
Method of forming an integrated resonator with a mass bias
Byron Neville Burgess, Allen, TX (US); William Robert Krenik, Garland, TX (US); and Stuart M. Jacobsen, Frisco, TX (US)
Assigned to Texas Instruments Incorporated, Dallas, TX (US)
Filed by TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US)
Filed on Aug. 27, 2019, as Appl. No. 16/551,757.
Application 14/970,676 is a division of application No. 13/484,931, filed on May 31, 2012, granted, now 9,246,467, issued on Jan. 26, 2016.
Application 16/551,757 is a continuation of application No. 14/970,676, filed on Dec. 16, 2015, granted, now 10,396,746, issued on Aug. 27, 2019.
Prior Publication US 2019/0386627 A1, Dec. 19, 2019
Int. Cl. H03H 3/04 (2006.01); H03H 9/10 (2006.01); H03H 3/02 (2006.01); H03H 9/02 (2006.01); H03H 9/17 (2006.01); H01L 23/498 (2006.01); H01L 23/31 (2006.01); H03H 9/05 (2006.01)
CPC H03H 3/02 (2013.01) [H03H 3/04 (2013.01); H03H 9/02102 (2013.01); H03H 9/02149 (2013.01); H03H 9/1007 (2013.01); H03H 9/1057 (2013.01); H03H 9/175 (2013.01); H01L 23/3107 (2013.01); H01L 23/3171 (2013.01); H01L 23/49838 (2013.01); H03H 9/0542 (2013.01); H03H 2003/023 (2013.01); H03H 2003/027 (2013.01); Y10T 29/42 (2015.01); Y10T 29/49171 (2015.01); Y10T 29/49172 (2015.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a resonator, comprising:
forming a bottom dielectric structure over a substrate;
forming a top dielectric structure over the substrate;
forming a piezoelectric layer between the top and bottom dielectric structures;
forming a bottom electrode between the piezoelectric layer and the bottom dielectric structure;
forming a top electrode between the piezoelectric layer and the top dielectric structure;
forming a metal layer over the top dielectric structure; and
patterning the metal layer thereby forming a first contact pad making electrical contact to the top electrode, a second contact pad making electrical contact with the bottom electrode, and a mass bias located over the top dielectric structure.