CPC H01M 4/386 (2013.01) [C01B 33/021 (2013.01); H01B 1/04 (2013.01); H01M 4/134 (2013.01); H01M 4/1395 (2013.01); H01M 4/366 (2013.01); H01M 10/0525 (2013.01); H01M 10/44 (2013.01); C01P 2002/74 (2013.01)] | 11 Claims |
1. An active material comprising a silicon clathrate II type crystal phase,
including a void inside a primary particle, and
a void amount of the void with a fine pore diameter of 100 nm or less is 0.05 cc/g or more and 0.15 cc/g or less.
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