US 11,799,057 B2
Group III-nitride light emitting devices including a polarization junction
Han Wui Then, Portland, OR (US); Sansaptak Dasgupta, Hillsboro, OR (US); and Marko Radosavljevic, Portland, OR (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Nov. 19, 2021, as Appl. No. 17/530,725.
Application 17/530,725 is a continuation of application No. 16/643,924, granted, now 11,183,613, previously published as PCT/US2017/054390, filed on Sep. 29, 2017.
Prior Publication US 2022/0077349 A1, Mar. 10, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 33/32 (2010.01); H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/62 (2010.01)
CPC H01L 33/325 (2013.01) [H01L 33/0075 (2013.01); H01L 33/06 (2013.01); H01L 33/62 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A light emitter structure, comprising:
a quantum well (QW) structure with a first layer comprising a Group III-nitride (III-N) material having a first crystal polarity;
a polarization junction over or under the QW structure, wherein the polarization junction comprises a III-N material having a second crystal polarity, inverted from the first crystal polarity; and
a first contact electrically coupled to a second contact through the QW structure and the polarization junction.