CPC H01L 33/325 (2013.01) [H01L 33/0075 (2013.01); H01L 33/06 (2013.01); H01L 33/62 (2013.01)] | 20 Claims |
1. A light emitter structure, comprising:
a quantum well (QW) structure with a first layer comprising a Group III-nitride (III-N) material having a first crystal polarity;
a polarization junction over or under the QW structure, wherein the polarization junction comprises a III-N material having a second crystal polarity, inverted from the first crystal polarity; and
a first contact electrically coupled to a second contact through the QW structure and the polarization junction.
|