CPC H01L 29/66484 (2013.01) [H01L 21/823462 (2013.01); H01L 21/823481 (2013.01); H01L 21/823814 (2013.01); H01L 21/823857 (2013.01); H01L 27/0922 (2013.01); H01L 28/40 (2013.01); H01L 29/66492 (2013.01); H03K 19/018521 (2013.01); H01L 21/823878 (2013.01)] | 20 Claims |
1. A semiconductor device, comprising:
a trench including a first layer of a gate oxide of the semiconductor device disposed therein, the trench disposed in a region of a substrate that is free of a shallow trench isolation feature;
a second layer of the gate oxide of the semiconductor device disposed over the first layer of the gate oxide and outside the trench; and
a source region and a drain region disposed on either side of the trench;
wherein the trench has a first depth, and wherein the source region and the drain region extend into the substrate a second depth greater than the first depth.
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