US 11,799,008 B2
Semiconductor device and method of using
Ming Jian Wang, Hsinchu (TW); Xin Yong Wang, Hsinchu (TW); Cun Cun Chen, Hsinchu (TW); and Jia Liang Zhong, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW); and TSMC CHINA COMPANY, LIMITED, Shanghai (CN)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW); and TSMC CHINA COMPANY, LIMITED, Songjiang (CN)
Filed on Feb. 12, 2021, as Appl. No. 17/174,920.
Claims priority of application No. 202110096367.8 (CN), filed on Jan. 25, 2021.
Prior Publication US 2022/0238670 A1, Jul. 28, 2022
Int. Cl. H01L 29/423 (2006.01); H01L 29/40 (2006.01); H01L 27/088 (2006.01)
CPC H01L 29/4238 (2013.01) [H01L 27/088 (2013.01); H01L 29/402 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first doped region in a substrate, wherein the first doped region has a first dopant type;
a second doped region in the substrate, wherein the second doped region has a second dopant type opposite the first dopant type;
an isolation structure between the first doped region and the second doped region;
a silicide structure on the substrate, wherein the silicide structure comprises a main body and a silicide extension, and the main body is integral with the silicide extension; and
a plurality of first gate structures on the substrate, wherein each of the plurality of first gate structures continuously extending over the first doped region and the second doped region, a space between adjacent gate structures of the plurality of first gate structures comprises a first area and a second area, the silicide extension extends into the first area, the first doped region is in the substrate below the first area, and the second doped region is in the substrate below the second area.