US 11,799,002 B2
Semiconductor devices and methods of forming the same
Yen-Po Lin, Taipei (TW); Wei-Yang Lee, Taipei (TW); Yuan-Ching Peng, Hsinchu (TW); Chia-Pin Lin, Xinpu Township (TW); and Jiun-Ming Kuo, Taipei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Mar. 12, 2021, as Appl. No. 17/199,933.
Claims priority of provisional application 63/031,641, filed on May 29, 2020.
Prior Publication US 2021/0376094 A1, Dec. 2, 2021
Int. Cl. H01L 21/768 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 29/786 (2006.01)
CPC H01L 29/41733 (2013.01) [H01L 29/401 (2013.01); H01L 29/42392 (2013.01); H01L 29/66545 (2013.01); H01L 29/78696 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
depositing a dummy semiconductor layer and a first semiconductor layer over a substrate;
forming spacers on sidewalls of the dummy semiconductor layer;
forming a first epitaxial material and a second epitaxial material in the substrate;
exposing the dummy semiconductor layer and the first epitaxial material, wherein exposing the dummy semiconductor layer and the first epitaxial material comprises thinning a backside of the substrate;
etching the dummy semiconductor layer to expose the first semiconductor layer, wherein the spacers remain over and in contact with end portions of the first semiconductor layer while etching the dummy semiconductor layer;
etching portions of the first semiconductor layer using the spacers as a mask; and
replacing the second epitaxial material and the first epitaxial material with a backside via, the backside via being electrically coupled to a source/drain region of a first transistor.