CPC H01L 29/408 (2013.01) [C23C 16/401 (2013.01); C23C 16/403 (2013.01); H01L 21/022 (2013.01); H01L 21/0228 (2013.01); H01L 21/02145 (2013.01); H01L 21/02205 (2013.01); H01L 21/28158 (2013.01); H01L 29/161 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01); H01L 29/66477 (2013.01); H01L 29/78 (2013.01)] | 20 Claims |
1. A semiconductor device structure comprising:
a silicon germanium channel region;
an interface layer comprising a metal silicate film disposed on the silicon germanium channel region, wherein the metal silicate film comprises a halide level of less than about 0.2 atomic-%; and
a high-k dielectric material disposed on the interface layer.
|