CPC H01L 28/40 (2013.01) [H01L 21/02211 (2013.01); H01L 21/02214 (2013.01); H01L 21/02216 (2013.01); H01L 21/02263 (2013.01); H01L 21/02274 (2013.01); H01L 21/31116 (2013.01); H01L 21/7682 (2013.01); H01L 21/76822 (2013.01); H01L 21/76825 (2013.01); H01L 21/76837 (2013.01)] | 23 Claims |
1. An integrated capacitor, comprising:
a semiconductor surface on a substrate;
a bottom plate above and electrically isolated from said semiconductor surface;
a dielectric feature comprising at least one silicon compound material layer having a sloped dielectric sidewall portion on said bottom plate;
a discontinuous dielectric layer, including noncontiguous dielectric portions, that at least partially fills pits on a surface of said sloped dielectric sidewall portion, said discontinuous dielectric layer having an interface with said sloped dielectric sidewall portion, and
a top plate on a top of said dielectric feature.
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