US 11,798,969 B2
Apparatus and methods for sensing long wavelength light
Yun-Wei Cheng, Taipei (TW); Chun-Hao Chou, Tainan (TW); Kuo-Cheng Lee, Tainan (TW); and Ying-Hao Chen, Tainan (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on Jun. 15, 2022, as Appl. No. 17/841,546.
Application 17/841,546 is a continuation of application No. 16/998,498, filed on Aug. 20, 2020, granted, now 11,367,745.
Prior Publication US 2022/0310677 A1, Sep. 29, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 27/146 (2006.01); H01L 31/0216 (2014.01); H01L 31/028 (2006.01)
CPC H01L 27/1463 (2013.01) [H01L 31/028 (2013.01); H01L 31/02161 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a device layer having a plurality of devices formed therein;
a semiconductor layer on the device layer, wherein:
the semiconductor layer comprises a plurality of isolation regions and a plurality of pixel regions,
each of the plurality of isolation regions comprises a trench isolation and an implanted well surrounding the trench isolation,
the trench isolation comprises a dielectric material,
the implanted well comprises a first semiconductor material, and
the plurality of pixel regions comprises a second semiconductor material that is different from the first semiconductor material; and
an insulation layer on the semiconductor layer,
wherein the insulation layer comprises silicon oxide to serve as a passivation layer for the semiconductor layer, and
wherein the plurality of devices are located entirely below a respective one of the plurality of isolation regions and positioned entirely outside the plurality of pixel regions.