US 11,798,962 B2
Solid-state imaging device with a pixel having a partially shielded photoelectric conversion unit region for holding charge
Hideo Kido, Kanagawa (JP); Masahiro Tada, Kanagawa (JP); Takahiro Toyoshima, Kanagawa (JP); Yasushi Tateshita, Kanagawa (JP); and Hikaru Iwata, Kanagawa (JP)
Assigned to SONY CORPORATION, Tokyo (JP)
Filed by SONY CORPORATION, Tokyo (JP)
Filed on Feb. 12, 2021, as Appl. No. 17/174,640.
Application 17/174,640 is a continuation of application No. 16/087,131, granted, now 10,998,357, previously published as PCT/JP2017/010301, filed on Mar. 15, 2017.
Claims priority of application No. 2016-065606 (JP), filed on Mar. 29, 2016.
Prior Publication US 2021/0242256 A1, Aug. 5, 2021
Int. Cl. H01L 27/146 (2006.01); H04N 25/585 (2023.01); H04N 25/621 (2023.01); H04N 25/70 (2023.01)
CPC H01L 27/14607 (2013.01) [H01L 27/1461 (2013.01); H01L 27/1463 (2013.01); H01L 27/1464 (2013.01); H01L 27/14605 (2013.01); H01L 27/14609 (2013.01); H01L 27/14614 (2013.01); H01L 27/14616 (2013.01); H01L 27/14623 (2013.01); H01L 27/14627 (2013.01); H01L 27/14638 (2013.01); H01L 27/14641 (2013.01); H04N 25/585 (2023.01); H04N 25/621 (2023.01); H04N 25/70 (2023.01); H01L 27/14645 (2013.01)] 2 Claims
OG exemplary drawing
 
1. A solid-state imaging device, comprising:
a pixel array unit which comprises a plurality of pixels, wherein
each pixel of the plurality of pixels includes:
a first photoelectric conversion unit; and
a second photoelectric conversion unit having lower sensitivity than the first photoelectric conversion unit,
the second photoelectric conversion unit is in an outer periphery of the first photoelectric conversion unit,
the second photoelectric conversion unit is in a point-symmetrical region with respect to a center of the first photoelectric conversion unit as a symmetrical point,
a light incident side of a partial region of the second photoelectric conversion unit is shielded from light incident on the light incident side, and
the partial region is used as a memory unit to hold a charge.