US 11,798,941 B2
Semiconductor device having an upper epitaxial layer contacting two lower epitaxial layers
Wei-Yuan Lu, Taipei (TW); and Sai-Hooi Yeong, Zhubei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Nov. 16, 2020, as Appl. No. 17/99,636.
Application 17/099,636 is a division of application No. 16/200,702, filed on Nov. 27, 2018, granted, now 10,840,243, issued on Nov. 17, 2020.
Application 16/200,702 is a division of application No. 15/696,573, filed on Sep. 6, 2017, granted, now 10,325,911, issued on Jun. 18, 2019.
Claims priority of provisional application 62/440,778, filed on Dec. 30, 2016.
Prior Publication US 2021/0091078 A1, Mar. 25, 2021
Int. Cl. H01L 29/78 (2006.01); H01L 27/088 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 21/8234 (2006.01); H01L 29/08 (2006.01); H01L 29/165 (2006.01); H01L 21/768 (2006.01); H01L 21/285 (2006.01); H01L 29/49 (2006.01)
CPC H01L 27/0886 (2013.01) [H01L 21/28525 (2013.01); H01L 21/76897 (2013.01); H01L 21/823431 (2013.01); H01L 21/823475 (2013.01); H01L 21/823481 (2013.01); H01L 29/0847 (2013.01); H01L 29/165 (2013.01); H01L 29/41791 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 21/28518 (2013.01); H01L 21/76831 (2013.01); H01L 21/823425 (2013.01); H01L 29/495 (2013.01); H01L 29/4958 (2013.01); H01L 29/4966 (2013.01); H01L 29/4975 (2013.01); H01L 29/665 (2013.01); H01L 29/7853 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first source/drain epitaxial layer disposed at a source/drain region of a first fin structure;
a second source/drain epitaxial layer disposed at a source/drain region of a second fin structure;
an etch-stop layer covering part of the first and second source/drain epitaxial layers; and
a third source/drain epitaxial layer disposed on the first and second epitaxial layers and disposed on an upper portion of the etch-stop layer disposed between the first source/drain epitaxial layer and the second source/drain epitaxial layer.